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Data Sheet, V1.2, Sep 2008
BTS5231-2GS
S m ar t H i g h - S i d e P ow er S w i t c h PROFET Two Channels, 140 m
Automotive Power
Smart High-Side Power Switch BTS5231-2GS
Table of Contents
Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Pin Assignment BTS5231-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 10 11 13 15 15 16 16 16 17 18 19 21 22 23
5 Package Outlines BTS5231-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
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Smart High-Side Power Switch PROFET
BTS5231-2GS
Product Summary
The BTS5231-2GS is a dual channel high-side power switch in PG-DSO-14-31 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology.
PG-DSO-14-31
Operating voltage Over voltage protection On-State resistance Nominal load current (one channel active) Current limitation Current limitation repetitive Standby current for whole device with load
Vbb(on) Vbb(AZ) RDS(ON) IL(nom) IL(LIM) IL(SCr) Ibb(OFF)
4.5 ... 28 V 41 V 140 m 1.8 A 8A 3A 2.5 A
Basic Features
* * * * * * Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behaviour at undervoltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected
Type BTS5231-2GS
Data Sheet
Ordering Code On request
3
Package PG-DSO-14-31
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Smart High-Side Power Switch BTS5231-2GS
* Optimized inverse current capability * Green product (RoHS compliant) * AEC Qualified
Protective Functions
* * * * * * * * * Reverse battery protection without external components (GND resistor integrated) Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Overvoltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD)
Diagnostic Functions
* * * * * * * * Enhanced IntelliSense signal for each channel Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source High accuracy of current sense signal at wide load current range Open load detection in ON-state by load current sense Over load (current limitation) diagnosis in ON-state, signalling by voltage source Latched over temperature diagnosis in ON-state, signalling by voltage source Open load detection in OFF-state, signalling by voltage source
Applications
* C compatible high-side power switch with diagnostic feedback for 12 V grounded loads * All types of resistive, inductive and capacitive loads * Suitable for loads with high inrush currents, so as lamps * Suitable for loads with low currents, so as LEDs * Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Overview
1
Overview
The BTS5231-2GS is a dual channel high-side power switch (two times 140 m) in PG-DSO-14-31 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology.
1.1
Block Diagram
channel 1
VBB load current sense clamp for inductive load
internal power supply logic IN1 IS1 SEN ESD protection
gate control & charge pump open load detection temperature sensor multi step load current limitation OUT1
channel 2
IN2 IS2
control and protection circuit equivalent to channel 1 OUT2 R GND GND
Figure 1
Block Diagram
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb IIN1 VIN1 VIN2 VIS1 VIS2 IIN2 IIS1 IIS2 ISEN
Ibb VBB I L1 V DS1 VOUT1 OUT2 I L2 V DS2 V OUT2 GND IGND
Terms2ch.emf
IN1 IN2 IS1 IS2 SEN
OUT1
BTS5231-2GS
VSEN
Figure 2
Terms
Symbols without channel number are channel related and valid for each channel separately.
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Pin Configuration
2
2.1
Pin Configuration
Pin Assignment BTS5231-2GS
(top view)
VBB GND IN1 IS1 IS2 IN2 VBB
1 2 3 4 5 6 7
14 13 12 11 10 9 8
VBB OUT1 OUT1 OUT2 OUT2 SEN VBB
Figure 3
Pin Configuration PG-DSO-14-31
2.2
Pin 3 6 4 5 9 12, 13 10, 11 2
Pin Definitions and Functions
Symbol IN1 IN2 IS1 IS2 SEN OUT1 GND
1)
I/O OD I I O O I O O - -
Function Input signal for channel 1 Input signal for channel 2 Diagnosis output signal channel 1 Diagnosis output signal channel 2 Sense Enable input for channel 1&2 Protected high-side power output channel 1 Protected high-side power output channel 2 Ground connection Positive power supply for logic supply as well as output power supply
OUT2 1)
1, 7, 8, 14 VBB 2)
1) All output pins of each channel have to be connected 2) All VBB pins have to be connected
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Electrical Characteristics
3
3.1
Electrical Characteristics
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability.
Tj = 25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. Supply Voltage 3.1.1 3.1.2 Supply voltage Supply voltage for full short circuit protection (single pulse) (Tj = -40 C ... 150 C) Voltage at power transistor Unit Test Conditions max. 28 20 V V
Vbb Vbb(SC) VDS
-16 0
L = 8 H R = 0.2 1)
3.1.3 3.1.4
52 40
V V
Supply Voltage for Load Dump Vbb(LD) protection Load current Maximum energy dissipation single pulse
RI = 2 2) RL = 12
3) 4)
Power Stages 3.1.5 3.1.6
IL EAS
IL(LIM) A
45 mJ
IL(0) = 2.1 A Tj(0) = 150 C
Vbb=13.5V 0.9 W
5)
3.1.7
Power dissipation (DC)
Ptot
Ta = 85 C Tj 150 C
-5 -16 -2.0 -8.0 -5 -16 -2.0 -8.0 10 2.0 10 2.0 V mA V mA
Logic Pins 3.1.8 3.1.9 Voltage at input pin Current through input pin
VIN IIN VSEN
t 2 min t 2 min t 2 min t 2 min
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3.1.10 Voltage at sense enable pin
3.1.11 Current through sense enable ISEN pin
Data Sheet 8
Smart High-Side Power Switch BTS5231-2GS
Electrical Characteristics
Tj = 25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. 3.1.12 Current through sense pin Temperatures 3.1.13 Junction Temperature while switching max. 10 150 60 -55 150 -25 -40 Unit Test Conditions mA C C C kV -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B -
IIS
Tj 3.1.14 Dynamic temperature increase Tj
3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM VESD IN, SEN IS OUT
2) RI is the internal resistance of the Load Dump pulse generator.
Tstg
1) R and L describe the complete circuit impedance including line, contact and generator impedances. 3) Current limitation is a protection feature. Operation in current limitation is considered as "outside" normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse. 5) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 m thick) for Vbb connection. PCB is vertical without blown air.
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Block Description and Electrical Characteristics
4
4.1
Block Description and Electrical Characteristics
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump.
4.1.1
Output On-State Resistance
The on-state resistance depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2.
Vbb = 13.5 V
240 220 200 180 160 140 120 100 80 60 -50 -25 240 220 RDS(ON) /m 200 180 160 140 120 100 0 25 50 T /C 75 100 125 150 0 5 10 15 Vbb /V 20 25
Tj = 25 C
Figure 4
RDS(ON) /m
Typical On-State Resistance
4.1.2
Input Circuit
Figure 5 shows the input circuit of the BTS5231-2GS. There is an integrated input resistor that makes external components obsolet. The current source to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.
IN RIN IIN
RGND GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
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Smart High-Side Power Switch BTS5231-2GS
Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission.
IN tON tOFF t
VOUT
90% 70%
70%
dV /dtON
30% 10%
dV /dtON
30%
t
SwitchOn.emf
Figure 6
Switching a Load (resistive)
4.1.3
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current.
V bb VBB
IL OUT V OUT L, RL
OutputClamp .em
GND
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Block Description and Electrical Characteristics
V OUT Vbb t V OUT(CL) IL t
IN = 5V
IN = 0V
InductiveLoad.emf
Figure 8
Switching an Inductance
Maximum Load Inductance
While demagnization of inductive loads, energy has to be dissipated in the BTS52312GS. This energy can be calculated with following equation:
V OUT(CL) V bb L E = ( V bb - V OUT(CL) ) ---------------------- ln 1 - ---------------------- + I L -----RL RL V OUT(CL)
This equation simplifies under the assumption of RL = 0:
(1)
V bb 2 1 E = -- LI L 1 - ---------------------- 2 V OUT(CL)
(2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation.
VBB=13.5V 100
EAS(mJ)
10
1 1 1,5 2 2,5 IL(A) 3 3,5 4
Figure 9
Data Sheet
Maximum Energy Dissipation Single Pulse, Tj,Start = 150 C
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Smart High-Side Power Switch BTS5231-2GS
Block Description and Electrical Characteristics
4.1.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Limit Values min. General 4.1.1 Operating voltage typ. max. 28 V Unit Test Conditions
Vbb
4.5
4.1.2
IGND Operating current one channel active two channels active
Standby current for whole device with load
mA 2.0 3.8 4.0 8.0 A 1.5 2.5 2.5 10 m 140 260 40 mV
VIN = 4.5 V, RL = 12 , VDS < 0.5 V VIN = 5 V VIN = 0 V, VSEN = 0 V, Tj = 25 C Tj = 85 C1) Tj = 150 C IL = 2.5 A Tj = 25 C Tj = 150 C IL < 0.15 A Ta = 85 C Tj 150 C 2) 3) IL = 40 mA VIN = 0 V
1)
4.1.3
Ibb(OFF)
Output Characteristics 4.1.4 On-State resistance per channel
RDS(ON)
4.1.5
Output voltage drop VDS(NL) limitation at small load currents Nominal load current per channel one channel active two channels active Output clamp Output leakage current per channel Inverse current capability
4.1.6
IL(nom)
1.8 1.3
A
4.1.7 4.1.8 4.1.9
VOUT(CL) IL(OFF) -IL(inv)
-24
-20 0.1 2
-17 4.0
V A A
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Block Description and Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Limit Values min. Thermal Resistance 4.1.10 Junction to Case 4.1.11 Junction to Ambient 2) one channel active all channels active Input Characteristics 4.1.12 Input resistance 4.1.13 L-input level 4.1.14 H-input level 4.1.15 Input hysteresis 4.1.16 L-input current 4.1.17 H-input current Timings 4.1.18 Turn-on time to 90% VOUT 4.1.19 Turn-off time to 10% VOUT 4.1.20 slew rate 30% to 70% VOUT 4.1.21 slew rate 70% to 30% VOUT typ. max. 48 75 71 2.0 -0.3 2.6 0.25 3 10 18 38 80 100 0.1 0.1 0.3 0.26 75 75 250 3.5 5.5 1.0 5.7 k V V V A A s
1)
Unit
Test Conditions
RthJC RthJA
K/W K/W
1) 1) 2)
RIN VIN(L) VIN(H)
VIN
IIN(L) IIN(H) tON tOFF
dV/ dtON -dV/ dtOFF
VIN = 0.4 V VIN = 5 V
RL = 12 , Vbb = 13.5 V 250 s RL = 12 , Vbb = 13.5 V 0.5 V/s RL = 12 , Vbb = 13.5 V 0.5 V/s RL = 12 , Vbb = 13.5 V
1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 m thick) for Vbb connection. PCB is vertical without blown air 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Protection Functions
4.2
Protection Functions
The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL 10 8 6 4 2 5 10 15 20 VDS
CurrentLimitation.emf
Figure 10
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN t IL IL(LIM) IL(SCr) tOFF(SC) t IIS t
OverLoad .emf
Figure 11
Shut Down by Over Temperature
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V).
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Protection Functions
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
P diss(rev) =
bb ( V DS(rev) I L ) + -------------
V R GND
2
(3)
The reverse current through the intrinsic body diode has to be limited by the connected load. The current trough sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The over-temperature protection is not active during reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry.
VBB
IN IS
RIN
ZDAZ
SEN RSEN ZDESD
logic
RGND GND
OUT
V OUT
OverVoltage .emf
Figure 12
Over Voltage Protection
4.2.4
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground, the BTS5231-2GS securely changes to or keeps in off state.
Data Sheet 16 V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Protection Functions
4.2.5
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Limit Values min. Over Load Protection 4.2.1 Load current limitation IL(LIM) 8 5 1.6 3 0.5 150 170
2)
Unit
Test Conditions
typ.
max. 16 10 6 A
4.2.2 4.2.3 4.2.4 4.2.5 4.2.6
Repetitive short circuit IL(SCr) current limitation Initial short circuit shut tOFF(SC) down time Thermal shut down temperature Thermal hysteresis Drain-Source diode voltage (VOUT > Vbb) Reverse current through GND pin
A ms C K 700 mV
VDS = 7 V VDS = 14 V VDS = 28 V 1) 2) Tj = Tj(SC) 2) TjStart = 25 C 2) Rthja = 40 K/W
Tj(SC)
Tj
10
Reverse Battery
-VDS(rev)
4.2.7
-IGND
65
mA
IL = -1.6 A, Vbb = -13.5 V, Tj = 150 C Vbb = -13.5 V 2)
Ground Circuit 4.2.8 Integrated Resistor in RGND GND line Overvoltage protection 115 200 41 47 220 350 350 53 V
Tj < 150 C Tj = 150 C Ibb = 2 mA
Over Voltage 4.2.9
Vbb(AZ)
Loss of GND 4.2.10 Output current while GND disconnected
IL(GND)
2
mA
IIN = 0,2) 3) ISEN = 0, IIS = 0, IGND = 0
1) Please note, that an external forced VDS must not exceed Vbb + |VOUT(CL)| 2) Not subject to production test, specified by design 3) No connection at these pins
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Diagnosis
4.3
Diagnosis
For diagnosis purpose, the BTS5231-2GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode, VIS(fault) is fed to the diagnosis pin.
S OL VBB
ROL
IN1 Rlim RIN1 IS1
0 1
IIS1 gate control OUT1 latch over temperature over load
C
SEN RSEN IN2 Rlim RIS1 RIS2 RIN2 IS2
0 1
0 1
open load @ off V IS(fault) VOUT(OL)
channel 1 gate control IIS2
diagnosis
GND
channel 2
OUT2 load
Sense.emf
Figure 13 Table 1
Block Diagram: Diagnosis Truth Table 1) Input Level L (OFF-State) Output Level GND GND Z Diagnostic Output SEN = H Z Z Z SEN = L Z Z Z Z Z Z
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Operation Mode Normal Operation (OFF) Short Circuit to GND Over-Temperature Short Circuit to Vbb Open Load
Vbb < VOUT(OL) > VOUT(OL)
18
VIS = VIS(fault)
Z
VIS = VIS(fault)
Data Sheet
Smart High-Side Power Switch BTS5231-2GS
Diagnosis Table 1 Truth Table (cont'd)1) Input Level H (ON-State) Output Level ~Vbb < Vbb ~GND Z Diagnostic Output SEN = H SEN = L Z Z Z Z Z Z
Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over-Temperature Short Circuit to Vbb Open Load
Vbb Vbb
IIS = IL / kILIS VIS = VIS(fault) VIS = VIS(fault) VIS = VIS(fault) IIS < IL / kILIS
Z
1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
4.3.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 . A typical value is 4.7 k
4000 3500 3000 2500 kILIS 2000 1500 1000 500 0 0.5 1 IL /A 1.5 2 2.5 dummy Tj = 150C dummy Tj = -40C
Figure 14
Current Sense Ratio kILIS1)
1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15.
normal operation IN V OUT OFF ON tON t over load (current limitation)
t IL
IIS
tsIS(ON)
tsIS(LC)
tsIS(OVL) VIS(fault) / RS
t
t
SwitchOn .emf
Figure 15
Timing of Diagnosis Signal in ON-state
In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the according input pin is high. This means, even if the overload disappears after the first thermal shutdown or when the device keeps switching on and off in over-load condition (thermal toggling), the diagnosis signal (VIS(fault)) is constantly available. Please refer to Figure 16 for details. Please note, that if the overload disappears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may remain for approximately up to 300 s longer than the duration of the overload. As a result open load and over load including over temperature can be differentiated in ON-state. Consideration must be taken in the selection of the sense resistor in order to distinguish nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense pin can be achieved with a big sense resistor even with currents being much smaller than the current limitation.
Data Sheet
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Smart High-Side Power Switch BTS5231-2GS
Diagnosis
over load (current limitation) IN IL OFF ON IL(LIM) over temperature OFF
t IIS tsIS(OVL) VIS(fault) / RS t
OverLoad.emf
Figure 16
Timing of Diagnosis Signal in Over Load Condition
4.3.2
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFFstate an external output pull-up resistor (ROL) is necessary.
IN ON OFF t V OUT Open Load, pull-up resistor active IIS td(fault) VIS(fault) / RS t
SwitchOff.emf
pull-up resistor inactive ts(fault) t
Figure 17
Timing of Diagnosis Signal in OFF-State
For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account.
V bb(min) - V OUT(OL,max) R OL = ---------------------------------------------------I leakage
(4)
Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS5231-2GS. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended.
Data Sheet
21
V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Diagnosis
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN.
SEN t
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
SEN.emf
Figure 18
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS5231-2GS is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level.
Data Sheet
22
V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Diagnosis
4.3.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 C to +150 C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Limit Values min. General Definition 4.3.1 Diagnostics signal in failure mode Diagnostics signal current limitation in failure mode Open load detection threshold voltage Sense signal invalid after negative input slope Fault signal settling time typ. max. 9 V Unit Test Conditions
VIS(fault) IIS(LIM)
5
4.3.2
3
mA
VIN = 0 V VOUT = Vbb IIS = 1 mA VIN = 0 V VOUT = Vbb
Open Load at OFF-State 4.3.3 4.3.4
VOUT(OL) td(fault) ts(fault)
1.6
2.8
4.4 1.2
V ms
VIN = 5 V to 0 V VOUT = Vbb VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA VIN = 5 V Tj = -40 C
4.3.5
200
s
Load Current Sense 4.3.6 Current sense ratio
kILIS
600 1210 1210 1210 1220 600 1210 1210 1210 1220 5.0 2000 1490 1416 1410 1405 1950 1490 1416 1410 1405 5.9 3850 1830 1645 1600 1590 3750 1830 1645 1600 1590 7.5 V
IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A
4.3.7 Current sense voltage VIS(LIM) limitation
Tj = 150 C
IIS = 0.5 mA IL = 2.6 A
Data Sheet
23
V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Diagnosis
Vbb = 9 V to 16 V, Tj = -40 C to +150 C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. 4.3.8 4.3.9 Parameter Symbol Limit Values min. Current sense IIS(LH) leakage/offset current Current sense leakage, while diagnosis disabled typ. max. 3.5 1 A A Unit Test Conditions
IIS(dis)
VIN = 5 V IL = 0 A VSEN = 0 V IL = 2.6 A VIN = 0 V to 5 V IL = 1.6 A
1)
4.3.10 Current sense settling tsIS(ON) time to IIS static 10% after positive input slope 4.3.11 Current sense settling tsIS(LC) time to IIS static 10% after change of load current Over Load in ON-State 4.3.12 Over load detection current 4.3.13 Sense signal settling time in overload condition Sense Enable 4.3.14 Input resistance 4.3.15 4.3.16 4.3.17 4.3.18 4.3.19
300
s
50
s
VIN = 5 V IL = 1 A to 0.6 A
1)
IL(OVL) tsIS(OVL)
4
IL(LIM) A
s
VIN = 5 V VIS = VIS(fault)
1)
200
VOUT = 2 V VIN = 0 V to 5 V
RSEN L-input level VSEN(L) VSEN(H) H-input level L-input current ISEN(L) H-input current ISEN(H) Current sense settling tsIS(SEN)
time after positive SEN slope
2.0 -0.3 2.6 3 10
3.5
5.5 1.0 5.7
k V V A A s
18 38 3
75 75 25
4.3.20 Current sense tdIS(SEN) deactivation time after negative SEN slope
1) Not subject to production test, specified by design
25
s
VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 2 A RS = 5 k 1)
Data Sheet
24
V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Package Outlines BTS5231-2GS
5
Package Outlines BTS5231-2GS
Dimensions in mm
Figure 19
PG-DSO-14-31 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/ JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Data Sheet 25 V1.2, 2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Revision History
6
Version V1.2 V1.1
Revision History
Date 2008-09-01 2007-06-14 Changes Modification of the figure 9 Chapter 4.3.3 Before : Please note that the diagnosis is enabled, when no signal is provided at pin SEN After : Please note that the diagnosis is disabled, when no signal is provided at pin SEN Creation of the green datasheet. Delta sheet to the grey BTS5231GS datasheet of December the 19th 2005 version 1.0 : Parameter 3.1.6 : Change to 45mJ at 13.5V Figure 9 new. Parameter 4.1.7 : Change to -24V min, -17V max * Modification of the green logos (suppression in the package outline and addition on the overview page 4.3.11: Test conditions: Typo corrected
V1.0
2007-04-17
Data Sheet
26
2008-09-01
Smart High-Side Power Switch BTS5231-2GS
Edition 2008-09-01
Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
27
2008-09-01

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